Ferroelectric Switch for Spin Injection

Authors

Mikhail Y. Zhuravlev, University of Nebraska-LincolnFollow
Sitaram Jaswal, University of Nebraska-LincolnFollow
Evgeny Y. Tsymbal, University of Nebraska-LincolnFollow
Renat F. Sabirianov, University of Nebraska at OmahaFollow

Document Type

Article

Publication Date

11-28-2005

Publication Title

Applied Physics Letters

Volume

87

Abstract

A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

Comments

Published by American Institute of Physics. Appl. Phys. Lett. 87, 222114 (2005).

Copyright 2005 American Institute of Physics. Used by permission.

Recommended Citation

Zhuravlev, Mikhail Y.; Jaswal, Sitaram; Tsymbal, Evgeny Y.; and Sabirianov, Renat F., "Ferroelectric Switch for Spin Injection" (2005). Physics Faculty Publications. 25.
https://digitalcommons.unomaha.edu/physicsfacpub/25