Voltage-Induced Switching with Magnetoresistance Signature in Magnetic Nano-Filaments

Authors

Andrei Sokolov, University of Nebraska-LincolnFollow
Renat F. Sabirianov, University of Nebraska at OmahaFollow
Ildar F. Sabiryanov, University of Nebraska-LincolnFollow
Bernard Doudin, University of Nebraska-LincolnFollow

Document Type

Article

Publication Date

2009

Publication Title

Journal of Physics: Condensed Matter

Volume

21

Abstract

Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal–insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.

Comments

Published in Journal of Physics: Condensed Matter 21 (2009) 485303 (5pp) DOI:10.1088/0953-8984/21/48/485303

Copyright 2009 IOP 1 Publishing Ltd. Used by permission.

Recommended Citation

Sokolov, Andrei; Sabirianov, Renat F.; Sabiryanov, Ildar F.; and Doudin, Bernard, "Voltage-Induced Switching with Magnetoresistance Signature in Magnetic Nano-Filaments" (2009). Physics Faculty Publications. 38.
https://digitalcommons.unomaha.edu/physicsfacpub/38