Moving towards the magnetoelectric graphene transistor

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Appl. Phys. Lett.






The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.

The authors would like to thank Dmitri Nikonov and Jun Yan for the valuable discussions and Yongfeng Lu for access to the Raman facility. Shi Cao would like to acknowledge Dr. Yuan Huang for his suggestions on the preparation of high quality graphene flakes on Cr2O3(0001). This research was supported by the National Science Foundation, through Grant Nos. NSF-ECCS-1508541 and ECCS-1509221, and the Nebraska Materials Research Science and Engineering Center (MRSEC) Grant No. DMR-1420645, as well as by the Nanoelectronics Research Corporation (NERC), a wholly owned subsidiary of the Semiconductor Research Corporation (SRC), through the Center for Nanoferroic Devices, an SRC-NRI Nanoelectronics Research Initiative Center. Work by Z.X. and X.H. was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award No. DE-SC0016153 (scanning probe studies).


This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.4999643.

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