Dielectric Permittivity and Electric Modulus in Bi2Ti4O11

Authors

Jianjun Liu, University of Nebraska at OmahaFollow
Chun-Gang Duan, University of Nebraska at Omaha
Wei-Guo Yin, University of Nebraska at Omaha
Wai-Ning Mei, University of Nebraska at OmahaFollow
Robert W. Smith, University of Nebraska at OmahaFollow
John R. Hardy, University of Nebraska-Lincoln

Document Type

Article

Publication Date

8-1-2003

Publication Title

The Journal of Chemical Physics

Volume

119

Issue

5

Abstract

Frequency and temperature dependences of dielectric permittivity and electric modulus of pure and Ba-doped Bi2Ti4O11 were studied in the ranges of 1021–106 Hz and 2150–350 °C, respectively. We found that the antiferroelectric phase transition temperature of Bi2Ti4O11 decreases with Ba doping. In the permittivity studies, we also observed dielectric relaxation peaks shift to higher temperature with increasing frequency. Furthermore, in the electric modulus formalism, conducting peaks were uncovered above 150 °C in addition to the dielectric relaxation peak. We discussed the mechanisms for the dielectric relaxation and conduction processes based on TiO6 octahedra distortion and a space-charge model.

Comments

Published in J. Chem. Phys., Vol. 119, No. 5, 1 August 2003. Copyright © 2003 American Institute of Physics. Used by permission.

Recommended Citation

Liu, Jianjun; Duan, Chun-Gang; Yin, Wei-Guo; Mei, Wai-Ning; Smith, Robert W.; and Hardy, John R., "Dielectric Permittivity and Electric Modulus in Bi2Ti4O11" (2003). Physics Faculty Publications. 10.
https://digitalcommons.unomaha.edu/physicsfacpub/10