Strain Induced Half-Metal to Semiconductor Transition in GdN

Authors

Chun-Gang Duan, University of Nebraska at OmahaFollow
Renat F. Sabirianov, University of Nebraska at OmahaFollow
Jianjun Liu, University of Nebraska-LincolnFollow
Wai-Ning Mei, University of Nebraska at OmahaFollow
Peter A. Dowben, University of Nebraska - LincolnFollow
John R. Hardy, University of Nebraska

Document Type

Article

Publication Date

6-2005

Publication Title

Physical Review Letters

Volume

94

Issue

23

Abstract

We investigate the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in the conduction properties associated with the volume increase: first from half-metallic to semimetallic, then ultimately to semiconducting. We show that applying stress can alter the carrier concentration as well as mobility of the holes and electrons in the majority spin channel. In addition, we found that the exchange parameters depend strongly on lattice constant, thus the Curie temperature of this system can be enhanced by applying stress or doping impurities.

Comments

Published in Physical Review Letters 94, 237201 (2005). URL: http://link.aps.org/abstract/PRL/v94/e237201 DOI:10.1103/PhysRevLett.94.237201

Copyright 2005 American Physical Society. Used by permission.

Recommended Citation

Duan, Chun-Gang; Sabirianov, Renat F.; Liu, Jianjun; Mei, Wai-Ning; Dowben, Peter A.; and Hardy, John R., "Strain Induced Half-Metal to Semiconductor Transition in GdN" (2005). Physics Faculty Publications. 27.
https://digitalcommons.unomaha.edu/physicsfacpub/27